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DG201A_MIL/202_MIL
Vishay Siliconix
Monolithic Quad SPST CMOS Analog Switches
(Obsolete for non-hermetic. Use DG201B/202B as pin-for-pin replacements.)
FEATURES
D D D D D "15-V Input Range Low Off Leakage--ID(on): 0.1 nA Low On-Resistance--rDS(on): 115 W 44-V Maximum Supply Ratings TTL and CMOS Compatible
BENEFITS
D Wide Input Range D Low Distortion Switching D Can Be Driven from Comparators or Op Amps Without Limiting Resistors
APPLICATIONS
D D D D Disk Drives Radar Systems Communications Systems Sample-and-Hold
DESCRIPTION
The DG201A_MIL and DG202_MIL are quad SPST analog switches designed to provide accurate switching over a wide range of input signals. When combining a low on-resistance and a wide signal range ("15 V) with low charge-transfer these devices are well suited for industrial and military applications. switches will block up to 30 V peak-to-peak and have a 44-V absolute maximum power supply rating.
These two devices are differentiated by the type of switch actions (See Truth Table).
Built on Vishay Siliconix' high voltage metal gate process to achieve optimum switch performance, each switch conducts equally well in both directions when on. When off these
The DG201A_MIL/202_MIL are available in hermetic packages. For plastic packages, use the DG201B/202B as pin-for-pin replacements.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG201A_MIL
IN1 D1 S1 V- GND S4 D4 IN4 1 2 3 4 5 6 7 8 Top View Dual-In-Line 16 15 14 13 12 11 10 9 IN2 D2 S2 V+ NC NC S3 D3 IN3 GND S4
DG201A_MIL
Key S1 V- 4 5 6 7 8
LCC D1 IN1 NC IN2 D2 3 2 1 20 19 18 17 16 15 14 9 10 11 12 13 S2 V+ NC NC S3
D4 IN4 NC IN3 D3 Top View
Logic
0 1
DG201A_MIL
ON OFF Logic "0" v 0.8 V Logic "1" w 2.4 V
DG202_MIL
OFF ON
Document Number: 70036 S-00405--Rev. G, 21-Feb-00
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4-1
DG201A_MIL/202_MIL
Vishay Siliconix
ORDERING INFORMATION
Temp Range Package
DG201AAK DG201AAK/883, JM38510/12302BEA -55 to 125 C 55 125_C 16-Pin CerDIP 16 Pi C DIP 7705301EA DG202AK DG202AK/883 JM38510/12302BEC 16-Pin Sidebraze -55 to 125 C 55 125_C LCC-20 7705301EC 77053012A
Part Number
ABSOLUTE MAXIMUM RATINGS
Voltages Referenced to V- V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . . . . . . . . . (V-) -2 V to (V+) +2 V or 20 mA, whichever occurs first Current, Any Terminal Except S or D . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA Peak Current, S or D (Pulsed at 1 ms, 10% duty cycle max) . . . . . . . . . . . . . . . . . . . . . . . . . . 70 mA Storage Temperature (K, Z Suffix) . . . . . . . . . . . . . . . . . -65 to 150_C (J, Y Suffix) . . . . . . . . . . . . . . . . . -65 to 125_C
Power Dissipation (Package)b 16-Pin CerDIP and Sidebrazec . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW LCC-20d . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 750 mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 12 mW/_C above 75_C d. Derate 10 mW/_C above 75_C
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+ S
V- - + V+ GND INX V- FIGURE 1. D
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Document Number: 70036 S-00405--Rev. G, 21-Feb-00
DG201A_MIL/202_MIL
Vishay Siliconix
SPECIFICATIONSa
Test Conditions Unless Specified Parameter Analog Switch
Analog Signal Rangee Drain-Source On-Resistance Source Off Leakage Current Drain Off Leakage Current Drain On Leakage Current VANALOG rDS(on) IS(off) ID(off) ID(on) VD = "10 V, IS = 1 mA VS = "14 V, VD = #14 V VD = "14 V, VS = #14 V VS = VD = "14 V Full Room Full Room Full Room Full Room Full -1 -100 -1 -100 -1 -200 "0.02 "0.02 "0.15 -15 115 15 175 250 1 100 1 100 1 200 nA A V W
A Suffix
-55 to 125_C
Symbol
V+ = 15 V, V- = -15V VIN = 2.4 V, 0.8 Vf
Tempb
Mind
Typc
Maxd
Unit
Digital Control
p Input Current with Input V lt I t Voltage High Hi h Input Current with Input Voltage Low VIN = 2.4 V IINH VIN = 15 V IINL VIN = 0 V Room Full Room Full Room Full -1 -10 -1 -1 -0.0004 0.003 -0.0004 1 10 mA A
Dynamic Characteristics
Turn-On Time Turn-Off Time Charge Injection Source-Off Capacitance Drain-Off Capacitance Channel On Capacitance Off Isolation Channel-to-Channel Crosstalk tON tOFF Q CS(off) CD(off) CD(on) + CS(on) OIRR XTALK See Switching Time g Test Circuit T t Ci it CL = 1000 pF, Vg= 0 V Rg = 0 W VS = 0 V, VIN = 5 V, f = 1 MHz VD = VS = 0 V, VIN = 0 V f = 1 MHz VIN = 5 V, RL = 75 W VS = 2 V, f = 100 kHz Room Room Room Room Room Room Room Room 480 370 20 5 5 16 70 dB 90 pF F 600 ns 450 pC
Power Supply
Positive Supply Current Negative Supply Current I+ All Channels On or Off I- Room -1 -0.3 Room 0.9 2 mA
Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function.
Document Number: 70036 S-00405--Rev. G, 21-Feb-00
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DG201A_MIL/202_MIL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Charge Injection vs. Analog Voltage
70 60 50 40 r DS(on) ( W ) 30 Q (pC) QD 20 10 0 -10 -20 50 -30 -15 -10 -5 0 5 10 15 -25 -15 -5 5 15 25 VANALOG - Analog Voltage (V) VD - Drain Voltage (V) QS 100 200 "8 V 150 "10 V "12 V "15 V V+ = 15 V, V- = -15 V TA = 25_C 250 "5 V 300 TA = 25_C
rDS(on) vs. VD and Power Supply Voltage
rDS(on) vs. VD and Temperature
180 V+ = 15 V, V- = -15 V 160
Leakage vs. Temperature
100 nA V+ = 15 V, V- = -15 V VD = "14 V
10 nA
140 r DS(on) ( W ) I S, I D 125_C 120 85_C 25_C
1 nA
100 pA
IS(off), ID(off), ID(on)
100
10 pA 0_C -40_C -55_C 1 pA
80
60 -15 -10 -5 0 5 VD - Drain Voltage (V) 10 15
0.1 pA -55 -35
-15
5
25 45 65 Temperature (_C)
85
105
125
Supply Current vs. Switching Frequency
6 2.0
Insertion Loss vs. Frequency
4
V+ = 15 V V- = -15 V LOSS (dB) I+
0.0 V+ = 15 V V- = -15 V Ref. 0.0 dBm 1 kW
1 MW
2 I+, I- (mA) -2.0
0 I- -2
-4.0
See Figures 3 and 4 RL = 50 W
-6.0 -4
-6 1k 10 k 100 k f - Frequency (Hz) 1M 1k 10 k 100 k 1M f - Frequency (Hz) 10 M
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Document Number: 70036 S-00405--Rev. G, 21-Feb-00
DG201A_MIL/202_MIL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Crosstalk and Off Isolation vs. Frequency
0 -20 -40 X TALK, ISO (dB) -60 Off Isolation -80 -100 -120 See Figures 3 and 4 -140 -8 -160 10 k -10 100 k 1M f - Frequency (Hz) 10 M -20 -15 -10 -5 0 5 10 15 VD or VS - Drain or Source Voltage (V) 20 Crosstalk V+ = 15 V V- = -15 V Ref. 0 dBm RL = 50 W I S, I D (pA) 10 8 6 4 2 0 -2 -4 -6 ID(on) V+ = 15 V V- = -15 V TA = 25_C For ID(off), VS = -VD For IS(off), VD = - VS IS(off), ID(off)
Leakage Current vs. Analog Voltage
Switching Time vs. Temperature
1000 900 800 t ON t OFF (ns) , t ON t OFF (ns) , 700 600 tON 500 400 300 200 100 -55 -35 -15 5 25 45 65 85 105 125 tOFF V+ = 15 V V- = -15 V VS = 2 V 1000 900 800 700 600 500 400
Switching Time vs. Power Supply Voltage
tON
tOFF 300 200 100 10 12 14 16 18 20 22
Temperature (_C)
V+ - Positive Supply (V)
Document Number: 70036 S-00405--Rev. G, 21-Feb-00
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DG201A_MIL/202_MIL
Vishay Siliconix
TEST CIRCUITS
VO is the steady state output with switch on. Feedthrough via gate capacitance may result in spikes at leading and trailing edge of output waveform.
+15 V
V+ VS = +2 V S IN 3V GND V- D VO RL 1 kW CL 35 pF
Logic Input
3V 50% 0V tOFF 90% tr <20 ns tf <20 ns
Switch Output -15 V VO = VS RL RL + rDS(on)
VO tON
FIGURE 2. Switching Time
+15 V C +15 V C VS
V+
V+ S1 Rg = 50 W IN1 0V, 2.4 V S2 NC GND V- C IN2 GND -15 V C = RF bypass VS VO VS VO -15 V V- C RL D2 D1 50 W
VS Rg = 50 W 0V, 2.4 V
S
D
VO
IN
RL
VO
0V, 2.4 V
Off Isolation = 20 log
XTALK Isolation = 20 log
FIGURE 3. Off Isolation
FIGURE 4. Channel-to-Channel Crosstalk
+15 V DVO Rg V+ S IN 3V GND V- DVO = measured voltage error due to charge injection The charge injection in coulombs is Q = CL x DVO -15 V D VO CL 1000 pF INX ON OFF ON VO
Vg
FIGURE 5. Charge Injection
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Document Number: 70036 S-00405--Rev. G, 21-Feb-00
DG201A_MIL/202_MIL
Vishay Siliconix
APPLICATION HINTSa
V+ Positive Supply Voltage (V)
15 10 12 8b
V- Negative Supply Voltage (V)
-15 -12 -10 -8
VIN Logic Input Voltage VINH(min)/VINL(max) (V)
2.4/0.8 2.4/0.8 2.2/0.6 2.0/0.5
VS or VD Analog Voltage Range (V)
-15 to 15 -12 to 12 -10 to 10 -8 to 8
Notes: a. Application Hints are for DESIGN AID ONLY, not guaranteed and not subject to production testing. b. Operation below "8 V is not recommended.
APPLICATIONS
+15 V V+
Logic Input Low = Sample High = Hold
1 kW +15 V -15 V - LM101A VIN + 5 MW 5.1 MW V- 30 pF DG201A_MIL 1000 pF J202
+15 V
2N4400 50 pF 200 W VOUT
J500 J507
-15 V Aquisition Time Aperature Time Sample to Hold Offset Droop Rate = 25 ms = 1 ms = 5 mV = 5 mV/s -15 V
FIGURE 6. Sample-and-Hold
Document Number: 70036 S-00405--Rev. G, 21-Feb-00
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DG201A_MIL/202_MIL
Vishay Siliconix
APPLICATIONS
+15 V 160 C4 fC4 Select fC3 Select TTL Control fC2 Select fC1 Select 150 pF C3 Voltage Gain - dB 1500 pF C2 0.015 mF C1 0.15 mF DG201A_MIL GND V- -40 1 -15 V +15 V - R1 = 10 kW LM101A + R2 = 10 kW 30 pF -15 V VOUT AL (Voltage Gain Below Break Frequency) = 1 fC (Break Frequency) = 2pR3CX fL (Unity Gain Frequency) = rDS(on) Max Attenuation = 10 kW 1 2pR1CX [-47 dB R3 = 1 MW 10 100 1k 10 k 100 k 1M 80 fC1 40 fC2 fC3 fC4 V1 120
0
fL1
fL2
fL3
fL4
f - Frequency (Hz) R3 R1
= 100 (40 dB)
FIGURE 7. Active Low Pass Filter with Digitally Selected Break Frequency
+5 V
+15 V
30 pF
VIN1
VL
V+
+15 V + LM101A
VIN2 DG419
- -15 V
+15 V
RF1 18 kW
RF1 9.9 kW
RF1 100 kW
DG202_MIL
CH GND V-
-15 V Gain 1 (x1) Gain 2 (x10) Gain 3 (x100) Gain 4 (x1000) V- Logic High = Switch On -15 V GND RG1 2 kW RG2 100 W RG3 100 W
Gain =
RF + RG RG
FIGURE 8. A Precision Amplifier with Digitally Programable Input and Gains
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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